Compact modeling of optically gated carbon nanotube field effect transistor
نویسندگان
چکیده
منابع مشابه
Compact modeling of Optically-Gated Carbon NanoTube Field Effect Transistor
Background Carbon Nanotube Field Effect Transistors (CNTFETs) have high charge sensitivity at room temperature [1]. By using this sensitivity, some nonvolatile memory devices have been demonstrated with charge trapping in SiO 2 gate insulator [2, 3]. Besides, a new design of synapse-like circuit requires a multi-level nonvolatile memory [4]. For this application, and according to its high charg...
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Single-walled carbon nanotube field-effect transistors were fabricated using solid electrolyte (PEO plus LiClO4) as gating materials. The SWNT FETs demonstrated strong gate-channel coupling with improved device characteristics compared with back-gated devices. More importantly, the nanotubes can be easily doped using different concentrations of electron acceptor mixed in the polymer materials. ...
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By coating a thin layer of photosensitive polymer such as poly3-octylthiophene-2,5-diyl (P3OT), the Carbon Nanotube Field Effect Transistor (CNTFET) provides an optical gating phenomenon [1]. It is called Optical-Gated CNTFET (OG-CNTFET or OGCNTFET). Compared to the conventional CNTFET, the OG-CNTFET reveals a right hand shift of the drain current vs. gate bias voltage. If this device is under ...
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In this paper, we describe the development of device models and tools for the design of the carbon nanotube FET (CNFET). Both HSPICE model and Verilog-A model for CNFET including typical device/circuit level non-idealities have been developed. They can be used for design of nanotube transistor circuits as well as to study performance benefits of the new transistor.
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ژورنال
عنوان ژورنال: physica status solidi (b)
سال: 2010
ISSN: 0370-1972,1521-3951
DOI: 10.1002/pssb.200983818